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Silicon MOSFETs (Small Signal)
2SK3938
Silicon N-channel MOSFET
For switching circuits Features
High-speed switching SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.33+0.05 -0.02 3 0.15 min. 0.800.05 1.200.05 0.10+0.05 -0.02
Unit: mm
(0.40) (0.40) 0.800.05 1.200.05 5
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Channel temperature Storage temperature
Symbol VDSS VGSS ID IDP PD Tch Tstg
Rating 30 12 100 200 100 125 -55 to +125
Unit V V mA mA mW C C
1: Gate 2: Source 3: Drain
0.15 min.
Absolute Maximum Ratings Ta = 25C
0.23+0.05 -0.02
1
2
0 to 0.01
0.520.03
5
SSSMini3-F1 Package
Marking Symbol: 6U
Min 30 1.0 10 0.5 1.0 7 5 20 55 12 1.5 12 8 Typ Max Unit V A A V mS pF pF pF ns ns
Electrical Characteristics Ta = 25C3C
Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time
*
Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff
Conditions ID = 10 A, VGS = 0 VDS = 20 V, VGS = 0 VGS = 10 V, VDS = 0 10 ID = 1.0 A, VDS = 3 V A, ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V ID = 10 mA, VDS = 3 V, f = 1 kHz
VDS = 3 V, VGS = 0, f = 1 MHz
10 6
VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA
350 350
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : ton , toff measurement circuit VOUT 90% 290 10% VGS VGS = 0 V to 3 V 50 VOUT 100 F VDD = 3 V ton 90% toff of 10%
0.15 max.
Publication date: December 2004
SJF00043AED
1
2SK3938
2SK3938_ PD-Ta
PD Ta
2SK3938_ ID-VDS
ID VDS
2SK3938_ ID-VGS
ID VGS
120
120 Ta = 25C 120 Ta = -25C VDS = 3 V 25C 85C 80
Power dissipation PD (mW)
80
80
2.6 V 2.4 V 2.2 V 2.0 V
40
40
Drain current ID (mA)
Drain current ID (A)
VGS = 2.8 V
40
0
0
40
80
120
0
0
4
8
12
0
0
1
2
3
4
5
Ambient temperature Ta (C)
2SK3938_ Yfs -VGS
Drain-source voltage VDS (V)
2SK3938_ Yfs -ID
Gate-source voltage VGS (V)
2SK3938_ RDS(on)-VGS
Yfs VGS
Yfs ID
RDS(on) VGS
Forward transfer admittance Yfs (mS)
Forward transfer admittance Yfs (mS)
120
25C 85C
120
Drain-source ON resistance RDS(on) ()
VDS = 3 V
Ta = -25C
VGS = 3 V Ta = 25C
20
ID = 10 mA
16
80
80
12
8 Ta = 85C 25C -25C 0 4 8 12
40
40
4
0
0
1
2
3
0
0
20
40
60
80
100
0
Gate-source voltage VGS (V)
Drain current ID (mA)
Gate-source voltage VGS (V)
2
SJF00043AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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